[口头报告]Numerical Analysis of Outside Vapor Deposition Process under Various Operating Conditions

Numerical Analysis of Outside Vapor Deposition Process under Various Operating Conditions
编号:171 稿件编号:292 访问权限:仅限参会人 更新:2024-04-29 19:35:15 浏览:434次 口头报告

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摘要
Abstract: Improving deposition performance of final product SiO2 particles is highly significant in the outside vapor deposition (OVD) process for the production of high-quality optical fibers. To evaluate deposition performance, the particle deposition efficiency and average particle diameter on the target surface, are primarily studied. The Computational Fluid Dynamics (CFD) was applied to simulate this complex multiphase flow system for capturing typical characteristics of flow and chemistry such as velocity and temperature distributions. The analysis on operating conditions, including the raw gas flow rate, the mass fraction ratio of SiCl4/O2, flow rates of O2 and H2, and types of the carrier gas, was conducted. The predicted findings indicate that there is an optimal raw gas flow rate to yield the peak deposition efficiency. The particle deposition efficiency increases with increasing SiCl4/O2 mass fraction ratio, while it declines as flow rates of O2 or H2 rises. In addition, using O2 as carrier gas yields larger deposition efficiency compared to H2 and N2, which present less uniform deposition of silica particles on the target surface. This analysis provides a better understanding of influences of the operating parameters on SiO2 particle deposition, which are crucial for the process optimization and product quality control.
关键字
Outside vapor deposition process; Multiphase flow; Eulerian–Eulerian framework; Particle nucleation and growth.
报告人
何珺
东南大学

稿件作者
余艾冰 Monash University
詹敏述 北京首创生态环保集团股份有限公司协同创新研究院
何珺 东南大学
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